Schematic diagram The NP4406SR-J uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss. General Features VDS =30V,ID =13A RDS(ON)(Typ.)=8mΩ @VGS=10V RDS(ON)(Typ.)=11mΩ @VGS=4.5V L.
VDS =30V,ID =13A RDS(ON)(Typ.)=8mΩ @VGS=10V RDS(ON)(Typ.)=11mΩ @VGS=4.5V Lead free product is acquired Surface mount package Marking and pin assignment SOP-8 Application High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load switch Package SOP-8 HF Pb XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP4406SR-J-G Storage Temperature -55°C to +150°C Package SOP-8 Devices Per Reel 4000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) Drain-source voltage Gate-source voltage paramete.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NP4406SR |
natlinear |
30V N-Channel Enhancement Mode MOSFET | |
2 | NP44N03 |
natlinear |
30V N-Channel MOS | |
3 | NP4008SR |
natlinear |
40V N-Channel Enhancement Mode MOSFET | |
4 | NP40N055CLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
5 | NP40N055DLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
6 | NP40N055ELE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
7 | NP40N055KLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
8 | NP40N055MLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
9 | NP40N055NLE |
Renesas |
MOS FIELD EFFECT TRANSISTOR | |
10 | NP40N10PDF |
Renesas |
N-channel Power MOS FET | |
11 | NP40N10VDF |
Renesas |
N-channel Power MOS FET | |
12 | NP40N10YDF |
Renesas |
N-channel Power MOS FET |