NP35S03QR - natlinear

NP35S03QR 30V N-Channel Enhancement Mode MOSFET

Schematic diagram The NP35S03QR uses SGT technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. D G S General Fe.

Features

 VDS =30V，ID =35A RDS(ON)=7.3mΩ (typical) @ VGS=10V RDS(ON)=10 mΩ (typical) @ VGS=4.5V  Excellent gate charge x RDS(ON) product(FOM)  Very low on-resistance RDS(ON)  150 °C operating temperature  Pb-free lead plating  100% UIS tested Application  DC/DC Converter  Ideal for high-frequency switching and synchronous rectification Marking and pin assignment PDFN3×3-8L （Top View） S1 S2 S3 G4 NP35S03 XXXX YYYY 8D 7D 6D 5D Package  PDFN3X3-8L HF Pb XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number NP35S03QR-G Storage Temperature -55°C to +150°C Package PDFN.