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NM27C512 - National Semiconductor

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NM27C512 High Performance CMOS EPROM

The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM) It is manufactured using National’s proprietary 0 8 micron CMOS AMGTM EPROM technology for an excellent combination of speed and economy while providing excellent reliability The NM27C512 provides microprocessor-based systems storage capacity for portions o.

Features

Y Y Y Y High performance CMOS 90 ns access time Fast turn-off for microprocessor compatibility Manufacturers identification code JEDEC standard pin configuration 28-pin DIP package 32-pin chip carrier Block Diagram TL D 10834
  – 1 TRI-STATE is a registered trademark of National Semiconductor Corporation NSC800TM is a trademark of National Semiconductor Corporation AMGTM is a trademark of WSI Inc C1995 National Semiconductor Corporation TL D 10834 RRD-B30M65 Printed in U S A Connection Diagrams 27C080 27C040 27C020 27C010 27C256 A19 XX VPP XX VPP XX VPP A16 A16 A16 A16 A15 A15 A15 A15 VPP.

The same part from a different manufacturer

Datasheet NM27C512 - Fairchild NM27C512

The NM27C512 is a high performance 512K UV Erasable Electrically Programmable Read Only Memory (EPROM). It is manufactur.

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