NF5102 - National Semiconductor

NF5102 N-Channel JFET

The NF5101-3 (TO-72) and PF5101-3 (TO-92) are N-channel silicon Junction Field-Effect Transistors designed for ultra-low noise preamplifier applications, particularly hydrophones, particle detectors, high quality mic/phono/tape, video, vidicon and l-R sensor preampli- fiers. Absolute Maximum Ratings Drain-Gate Voltage Reverse Gate-Source Voltage Forward Ga.

Features

^0.028-0.048 V 10.314 'GUI
* IO.7iT-1.2l9j
• Electrical Characteristics PARAMETER CONDITIONS PF/NF5101 PF/NF5102 PF/NF5103 UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX BVgss Gate-Source Breakdown Gl = 1/jA, v ds = ov 40 Voltage 'gss Gate Reverse Current V GS (offi Gate-Source Cutoff Voltage V GS -- 15V, T A = 25°C V os = OV T a = 125°C V DS -- 15V, nA D l -1 0.5 l DSS Saturation Drain Current V DS = 15V, V GS -OV, 10 < Pulsed 300/is 2% g fs Common-Source Transconductance V DG = 15V D l - 0.5mA mA D l = 2 35 g os Common-Source Output mA V DG = 15V, D l = 0.5 .