NE64535 - Advanced

NE64535 NPN SILICON LOW NOISE RF TRANSISTOR

The ASI NE64535 is a Common Emitter Device Designed for Low Noise Class A Amplifier Applications up to 4.0 GHz. PACKAGE STYLE .085 4L SQ FEATURES INCLUDE: • NF = 1.6 dB Typical @ 2 GHz • S21E2 = 11 dB Typical @ 2 GHz • Hermetic Ceramic Package MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 mA 25 V 12 V 1.5 V 300 mW @ TA ≤ 75 C O -65 °C to +2.

Features

INCLUDE:
• NF = 1.6 dB Typical @ 2 GHz
• S21E2 = 11 dB Typical @ 2 GHz
• Hermetic Ceramic Package MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 60 mA 25 V 12 V 1.5 V 300 mW @ TA ≤ 75 C O -65 °C to +200 °C -65 °C to +150 °C 85 °C/W TC = 25 °C 1 = Collector 2 & 4 = Emitter 3 = Base ORDER CODE: ASI10752 CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB ft S21E NF GA 2 TEST CONDITIONS VCB = 8 V VEB = 1.0 V VCE = 8.0 V VCB = 10 V VCE = 10 V VCE = 8 V VCE = 8 V IC = 20 mA IC = 20 mA IC = 10 mA f = 1.0 GHz f = 2.0 GHz f = 2.0 GHz IC = 7.0 mA MINIMUM TYPICAL MAXIMUM 100 1.0 50 250 0.6 8.0 .