NE5550279A - Renesas

NE5550279A Silicon Power LDMOS FET

Summary First edition issued Rev. 1.00 Date Mar 28, 2012 Page − All trademarks and registered trademarks are the property of their respective owners. C-1 Free Datasheet http://www.datasheet4u.com/ Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without.

Features

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• R09DS0033EJ0100 Rev.1.00 Mar 28, 2012 High Output Power : Pout = 33.0 dBm TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High power added efficiency : ηadd = 68% TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 15 dBm) High Linear gain : GL = 22.5 dB TYP. (VDS = 7.5 V, IDset = 40 mA, f = 460 MHz, Pin = 0 dBm) High ESD tolerance Suitable for VHF to UHF-BAND Class-AB power amplifier. APPLICATIONS
• 150 MHz Band Radio System
• 460 MHz Band Radio System
• 900 MHz Band Radio System ORDERING INFORMATION Part Number NE5550279A Order Number NE5550279A-A Package 79A (Pb .