NE33284A-T1 - NEC

NE33284A-T1 L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems. L 1.78 ±0.2 1 PACKAGE DIMENSIONS (Unit: mm) FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. a.

Features

• Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz
• Gate Width: Wg = 280 µm 1.78 ±0.2 L U 2 L 3 L 4 ORDERING INFORMATION SUPPLYING FORM STICK Tape & reel PART NUMBER NE33284A-SL NE33284A-T1 NE33284A-T1A LEAD LENGTH L = 1.0 ±0.2 mm ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current Total Power Dissipation Channel Temperature Storage Temperature VDS VGS ID Ptot Tch Tstg 4.0
  –3.0 IDSS 165 150
  –65 to +150 V mA mW ˚C ˚C 1. Source 2. Drain 3. Source 4. Gate RECOMMENDED OPERATING CONDITION (TA = 25.