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Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC moto.
2.7A, 60V. RDS(ON) = 0.2Ω @ VGS = 10V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. _________________________________________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation T A = 25°C unless otherwise noted NDT014 60 ±20 (Note 1a) Units V V A ±2.7 ±10 (Note 1a) (Note 1b) (Note 1c) 3 1.3 1.1 -65 to 150 .
NDT014 - VBsemi
NDT014-VB NDT014-VB Datasheet N-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.076.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | NDT014L |
Fairchild |
N-Channel MOSFET |
|
| 2 | NDT01N60 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 3 | NDT01N60T1G |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 4 | NDT02N40 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 5 | NDT02N60Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | NDT03N40Z |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 7 | NDT28P |
Insignis |
2Gb (x8) DDR3L Synchronous DRAM |
|
| 8 | NDT2955 |
Fairchild |
P-Channel MOSFET |
|
| 9 | NDT3055 |
Fairchild |
N-Channel MOSFET |
|
| 10 | NDT3055L |
ON Semiconductor |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 11 | NDT3055L |
Fairchild |
N-Channel MOSFET |
|
| 12 | NDT410EL |
Fairchild |
N-Channel MOSFET |
|