NDSH30120CDN - ON Semiconductor

NDSH30120CDN SiC Schottky Diode

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits inc.

Features

• Max Junction Temperature 175°C
• Avalanche Rated 110 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery / No Forward Recovery
• This Device is Halide Free and RoHS Compliant with Exemption 7a, Pb−Free 2LI (on second level interconnection) Applications
• General Purpose
• SMPS, Solar Inverter, UPS
• Power Switching Circuits 12 3 TO−247−3LD CASE 340CX MARKING DIAGRAM DSH30 120CDN AYWWZZ DSH30120CDN A YWW ZZ = Specific Device Code = Assembly Plant Code = Date Code (Year & Week) = Lot Code ORDERING INFORMATION See detailed ordering.