NDS9959-NL-VB www.VBsemi.com NDS9959-NL-VB Datasheet Dual N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration SO-8 Dual D2 D2 5 D1 6 D1 7 8 60 0.028 0.030 7 Dual 4 3 G2 2 S2 1 G1 S1 Top View FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested D1 D2 G1 .
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
D1
D2
G1
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.1 mH TC = 25 °C TC = 125 °C
VDS VGS
ID
IS IDM IAS EAS
PD
TJ, Tstg
LIMIT 60 ± 20 7 4 3.6 28 18 16.2 4.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NDS9959 |
Fairchild |
Dual N-Channel MOSFET | |
2 | NDS9952A |
Fairchild |
Dual N&P-Channel MOSFET | |
3 | NDS9953A |
Fairchild |
Dual P-Channel MOSFET | |
4 | NDS9955 |
Fairchild |
Dual N-Channel MOSFET | |
5 | NDS9956A |
Fairchild |
Dual N-Channel MOSFET | |
6 | NDS9957 |
Fairchild |
Dual N-Channel MOSFET | |
7 | NDS9958 |
Fairchild |
Dual N&P-Channel MOSFET | |
8 | NDS9925A |
Fairchild |
Dual N-Channel MOSFET | |
9 | NDS9933A |
Fairchild |
Dual P-Channel MOSFET | |
10 | NDS9936 |
Fairchild |
Dual N-Channel MOSFET | |
11 | NDS9945 |
Fairchild |
Dual N-Channel MOSFET | |
12 | NDS9947 |
Fairchild |
Dual P-Channel MOSFET |