SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance.These devices are particularly suited for low voltage applications such as DC motor cont.
3.1 A, 30 V. RDS(ON) = 0.1 Ω @ VGS = 10 V RDS(ON) = 0.15 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Opera.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NDS8926 |
Fairchild |
Dual N-Channel MOSFET | |
2 | NDS8928 |
Fairchild |
Dual N&P-Channel MOSFET | |
3 | NDS8934 |
Fairchild |
Dual P-Channel MOSFET | |
4 | NDS8936 |
Fairchild |
Dual N-Channel MOSFET | |
5 | NDS8947 |
Fairchild |
Dual P-Channel MOSFET | |
6 | NDS8958 |
Fairchild |
Dual N&P-Channel MOSFET | |
7 | NDS8410 |
Fairchild |
Single N-channel MOSFET | |
8 | NDS8410A |
Fairchild |
Single 30V N-Channel PowerTrench MOSFET | |
9 | NDS8410S |
Fairchild |
Single N-channel MOSFET | |
10 | NDS8425 |
Fairchild |
Single N-channel MOSFET | |
11 | NDS8426 |
Fairchild |
Single N-channel MOSFET | |
12 | NDS8426A |
Fairchild |
Single N-channel MOSFET |