The NDF9401 thru NDF9410 series of N-channel mono- lithic cascode duals is designed for broadband low noise differential amplifier applications requiring tight match, low capacitance, and very high common-mode rejection. Absolute Maximum Ratings (25°o Gate-Drain or Gate-Source Voltage Gate Current —50V 10 mA Device Dissipation (Each Side), T/ = 85°C (Der.
S -0 VdS" 20V. lu - 1 jiA Gate Operating Cur V D G - 35V. D I -20C-.UA Saturation Dram Current on-Source Fo conductance Common-Source Output Conductance non-Source Input Capacitance V DS = 20V, V GS = 0, (Note 1) VDG " 20V. I " 200 mA, VrjG " 20V, D! " 200 nA V DS = 20V. Vqs-0 Equivalent Input Noise Voltage Vqg " 20V. Id - 200 A jj Matching Characteristics PARAMETER CONDITIONS NDF9401, NDF9406 Differential Gate Current I QSSI 'DSS2 iVGS1" v GS2i Saturation Drai Current Ratio Differential GateSource Voltage ilVGSV V GS2 " " At Gate-Source Voltage Differential Drift, {Note 1) ,9.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | NDF9401 |
National Semiconductor |
N-Channel Monolithic Cascode Dual JFET | |
2 | NDF9403 |
National Semiconductor |
N-Channel Monolithic Cascode Dual JFET | |
3 | NDF9404 |
National Semiconductor |
N-Channel Monolithic Cascode Dual JFET | |
4 | NDF9405 |
National Semiconductor |
N-Channel Monolithic Cascode Dual JFET | |
5 | NDF9406 |
National Semiconductor |
N-Channel Monolithic Cascode Dual JFET | |
6 | NDF9407 |
National Semiconductor |
N-Channel Monolithic Cascode Dual JFET | |
7 | NDF9408 |
National Semiconductor |
N-Channel Monolithic Cascode Dual JFET | |
8 | NDF9409 |
National Semiconductor |
N-Channel Monolithic Cascode Dual JFET | |
9 | NDF9410 |
National Semiconductor |
N-Channel Monolithic Cascode Dual JFET | |
10 | NDF02N60Z |
ON Semiconductor |
N-Channel Power MOSFET | |
11 | NDF03N60Z |
ON Semiconductor |
N-Channel Power MOSFET | |
12 | NDF04N60Z |
ON Semiconductor |
MOSFET |