NCEP15T11J - NCE Power Semiconductor

NCEP15T11J NCE N-Channel Super Trench Power MOSFET

The NCEP15T11J uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =135V.

Features

● VDS =135V,ID =110A RDS(ON) <7.0mΩ @ VGS=10V
● Excellent gate charge x RDS(on) product(FOM)
● Very low on-resistance RDS(on)
● 175 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification Schematic diagram Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP15T11J NCEP15T11J TO-220-3L - - Absolute Maximum Ratings (TC=25℃unless otherwise noted).