NCE75H35TC - NCE Power Semiconductor

NCE75H35TC N-Channel Enhancement Mode Power MOSFET

The NCE75H35TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications. General Features ● VDSS =75V,ID =350A RDS(ON) < 2.2mΩ @ VGS=10V （Typ：1.7 mΩ） ● Good stability and uniformity with high EAS ● Special process technology for high ESD c.

Features

● VDSS =75V,ID =350A RDS(ON) < 2.2mΩ @ VGS=10V （Typ：1.7 mΩ）
● Good stability and uniformity with high EAS
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation Schematic diagram Application
● Automotive applications
● Hard switched and high frequency circuits
● Uninterruptible power supply TO-247 top view 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package NCE75H35TC NCE75H35TC TO-.