NCE70R900I - NCE Power Semiconductor

NCE70R900I N-Channel Super Junction Power MOSFET

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●Sma.

Features

●New technology for high voltage device
●Low on-resistance and low conduction losses
●Small package
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant VDS RDS(ON)TYP. ID 700 840 5 V mΩ A Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE70R900I TO-251 NCE70R900I NCE70R900K TO-252 NCE70R900K Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-So.