NCE4558K - NCE Power Semiconductor

NCE4558K N-Channel Enhancement Mode Power MOSFET

The NCE4558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =45V,ID =58A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability an.

Features

● VDS =45V,ID =58A RDS(ON) <12mΩ @ VGS=10V RDS(ON) <18mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Load switching
● Hard switched and high frequency circuits
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Packa.