NCE30H21 - NCEPOWER

NCE30H21 N-Channel Enhancement Mode Power MOSFET

The NCE30H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ) ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformit.

Features

● VDS =30V,ID =210A RDS(ON) < 2.5mΩ @ VGS=10V (Typ:1mΩ)
● High density cell design for ultra low Rdson
● Fully characterized Avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
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● Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment 100% UIS TESTED! 100% ΔVds TESTED! TO-220 top view Package Marking And Ordering Information Device Marking NCE30H21 Device NCE30H21 Dev.