NCE20PK0302U - NCE Power Semiconductor

NCE20PK0302U P-Channel Enhancement Mode Power MOSFET

The NCE20PK0302U uses advanced trench technology to provide excellent RDS(ON), low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. General Features MOSFET ● VDS = -20V,ID = -3.9A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 170mΩ @ VGS=-.

Features

MOSFET
● VDS = -20V,ID = -3.9A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V RDS(ON) < 170mΩ @ VGS=-1.8V Schematic diagram Schottky Diode
● VKA(V) = 20V, IF = 2A, VF<[email protected] Application
● Bidirectional blocking switch
● DC-DC conversion applications Marking and pin assignment DFN2X3-8L Bottom View Package Marking and Ordering Information Device Marking Device Device Package 0302 NCE20PK0302U DFN2X3-8L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol MOSFET Drain-Source Voltage VDS .