NCE20N60T - NCE Power Semiconductor

NCE20N60T N-Channel Super Junction Power MOSFET

The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. VDS@Tjmax 650 V RDS(ON) 190 mΩ ID 20 A Features ●New technology for high voltage device ●Lo.

Features

●New technology for high voltage device
●Low on-resistance and low conduction losses
●Ultra Low Gate Charge cause lower driving requirements
●100% Avalanche Tested
●ROHS compliant Application
● Power factor correction（PFC）
● Switched mode power supplies(SMPS)
● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE20N60T TO-247 NCE20N60T Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc.