NCE01H16 - NCE Power Semiconductor

NCE01H16 N-Channel Enhancement Mode Power MOSFET

The NCE01H16 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Pb Free Product NCE01H16 General Features ● VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current .

Features

● VDS =100V,ID =160A RDS(ON) <5.0mΩ @ VGS=10V (Typ:3.8mΩ)
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability Schematic diagram Application
● Power switching application
● Load switching
● Uninterruptible power supply Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package NCE01H16 NCE01H16 .