N08L63W2A - ON Semiconductor

N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit

6 CE2 I/O0 I/O2 VCC VSS I/O6 I/O7 NC 2 OE UB I/O10 I/O11 I/O12 3 A0 A3 A5 A17 NC A14 A12 A9 4 A1 A4 A6 A7 A16 A15 A13 A10 5 A2 CE1 I/O1 I/O3 I/O4 I/O5 WE A11 Pin Name A0-A18 WE CE1, CE2 OE LB UB I/O0-I/O15 VCC VSS NC Pin Function Address Inputs Write Enable Input Chip Enable Input Output Enable Input Lower Byte Enable Input Upper Byte Enable Input Dat.

Features

• Single Wide Power Supply Range 2.3 to 3.6 Volts
• Very low standby current 4.0µA at 3.0V (Typical)
• Very low operating current 2.0mA at 3.0V and 1µs(Typical)
• Very low Page Mode operating current 1.0mA at 3.0V and 1µs (Typical)
• Simple memory control Dual Chip Enables (CE1 and CE2) Byte control for independent byte operation Output Enable (OE) for memory expansion
• Low voltage data retention Vcc = 1.8V
• Very fast output enable access time 25ns OE access time
• Very fast Page Mode access time tAAP = 25ns
• Automatic power down to standby mode
• TTL compatible three-state output driver P.