N0132H - InterFET

N0132H Process Geometry

The InterFET N0132H Geometry is ideal for low noise high gain applications. Similar features to the N0132S Geometry with higher BV and lower input capacitance. Geometry Top View 132 G S-D S-D G Test Pattern Standard Parts • IFN112 Product Summary Parameters BVGSS Gate to Source Breakdown Voltage IDSS Drain to Source Saturation Current VGS(off) .

Features

• Low Noise: 1.5 nV/√Hz Typical
• Typical Input Capacitance: 12pF
• Typical Breakdown Voltage: -60V
• High Input Impedance
• Small Die: 518um X 518um X 203um
• Bond Pads: 90um X 90um
• Substrate Connected to Gate
• Au Back-Side Finish Applications
• Low Noise Amplifier
• Audio Amplifiers
• Mid to High-Gain Applications
• Matched Pair Applications
• Custom Part Options Description The InterFET N0132H Geometry is ideal for low noise high gain applications. Similar features to the N0132S Geometry with higher BV and lower input capacitance. Geometry Top View 132 G S-D S-D G Test Pattern S.