Microsemi’s InGaAs/InP PIN Photo The MXP4000 series of photo Diode chips are ideal for high bandwidth diodes are currently offered in die 1310nm and 1550nm optical networking form allowing manufacturers the applications. versatility of custom assembly The device series offers superior noise configurations. performance and sensitivity due to their This .
High Responsivity Low Dark Current Extremely Low Capacitance High Bandwidth Custom Sub-mounts APPLICATIONS 1310nm CATV Optical Applications 1550nm DWDM Optical Applications SONET/SDH, ATM 10 Gigabit Ethernet, Fibre Channel BENEFITS Planar passivation Low Contact Resistance Responsivity (Amps / Watt) PRODUCT HIGHLIGHT Typical Spectral Responsivity 1.2 1.0 0.8 0.6 0.4 0.2 0.0 800 900 1000 1100 1200 1300 1400 1500 1600 1700 Wavelength (nm) 355.6um ± 25um MXP4003 Anode 45 MICROSEMI Ø 40um ± 2um Bond Pad 355.6um ± 25um MXP4003 Ø 40um ± 2um Active Area 150um ± 20um Copyright 2001 Rev. 1..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MXP4000 |
Microsemi |
InGaAs/InP PIN Photodiode Chips | |
2 | MXP4001 |
Microsemi |
InGaAs/InP PIN Photodiode Chips | |
3 | MXP4002 |
Microsemi |
InGaAs/InP PIN Photodiode Chips | |
4 | MXP4003CTS |
MaxPower Semiconductor |
40V N-Channel MOSFET | |
5 | MXP4004AT |
MaxPower Semiconductor |
40V N-Channel MOSFET | |
6 | MXP4004BE |
MaxPower Semiconductor |
40V N-Channel MOSFET | |
7 | MXP4004BT |
MaxPower Semiconductor |
40V N-Channel MOSFET | |
8 | MXP4004BTS |
MaxPower Semiconductor |
40V N-Channel MOSFET | |
9 | MXP4004CT |
MaxPower Semiconductor |
N-Channel MOSFET | |
10 | MXP4004DT |
MaxPower Semiconductor |
40V N-Channel MOSFET | |
11 | MXP415-C |
Microsemi |
Photo Transistor Chip | |
12 | MXP1001-PS |
Microsemi |
Position Sensing Photo Detectors |