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MX4805 Dual P-Channel Enhancement Mode Power MOSFET

The MX4805 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -4.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -9A RDS(ON) (Typ.)12mΩ @ VGS=-20V k RDS(ON) (Typ.)13mΩ @ VGS=-10V RDS(ON) (Typ.)20mΩ @ VGS=-4..

Features

VDS = -30V,ID = -9A RDS(ON) (Typ.)12mΩ @ VGS=-20V k RDS(ON) (Typ.)13mΩ @ VGS=-10V RDS(ON) (Typ.)20mΩ @ VGS=-4.5V e High Power and current handing capability T Lead free product is acquired Surface mount package rce Application PWM applications Load switch u Power management So SOP-8 top view ip Absolute Maximum Ratings (TA=25℃unless otherwise noted) h Drain-Source Voltage C Gate-Source Voltage Parameter Symbol VDS VGS Limit -30 ±25 Unit V V Drain Current-Continuous ID -9 A Drain Current-Pulsed (Note 1) IDM -27 A Maximum Power Dissipation PD 2 W Operating Junction and Sto.

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