MWI25-12E7 - IXYS

MWI25-12E7 IGBT Module

MWI 25-12 E7 IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA IC25 = 52 A VCES = 1200 V VCE(sat) typ. = 1.9 V IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK t SC Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC 13 1 59 2 6 10 3 7 11 4 8 12 17 16 15 14 E72873 See outline drawing for pin arrangement Condi.

Features

• NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits
• HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current
• Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical Applications
• AC drives
• power supplies with power factor correction 412 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-4 MWI 25-12 E7 Diodes Symbol .