MURTA50060 - GeneSiC

MURTA50060 Silicon Super Fast Recovery Diode

Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 600 V to 1200 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MURTA50060 thru MURTA500120R VRRM = 600 V - 1200 V IF(AV) = 500 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads re.

Features

• High Surge Capability
• Types from 600 V to 1200 V VRRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive MURTA50060 thru MURTA500120R VRRM = 600 V - 1200 V IF(AV) = 500 A Heavy Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURTA50060(R) MURTA500120(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 600 424 600 -55 to 150 -55 to 150 1200 --1200 -55 to 150 -55 to 150 Elec.