MURT40010 - GeneSiC

MURT40010 Silicon Super Fast Recovery Diode

Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Isolation Type Package • Electrically Isolated base plate • Not ESD Sensitive MURT40005 thru MURT40020R VRRM = 50 V - 200 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Para.

Features

• High Surge Capability
• Types from 50 V to 200 V VRRM
• Isolation Type Package
• Electrically Isolated base plate
• Not ESD Sensitive MURT40005 thru MURT40020R VRRM = 50 V - 200 V IF(AV) = 400 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT40005(R) MURT40010(R) MURT40020(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 71 100 -55 to 150 -55 to 150 200 14.