MURT30060 - GeneSiC

MURT30060 Silicon Super Fast Recovery Diode

Silicon Super Fast Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM MURT30040 thru MURT30060R VRRM = 50 V - 600 V IF = 300 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT30040 (R) MURT30060 (R) Repetitive peak reverse voltage RM.

Features

• High Surge Capability
• Types up to 600 V VRRM MURT30040 thru MURT30060R VRRM = 50 V - 600 V IF = 300 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT30040 (R) MURT30060 (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 283 400 300 600 424 600 300 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.3 ms Tj Tstg 2750 -40 to 175 -.