Silicon Super Fast Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM MURT30040 thru MURT30060R VRRM = 50 V - 600 V IF = 300 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MURT30040 (R) MURT30060 (R) Repetitive peak reverse voltage RM.
• High Surge Capability
• Types up to 600 V VRRM
MURT30040 thru MURT30060R
VRRM = 50 V - 600 V IF = 300 A
Three Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MURT30040 (R)
MURT30060 (R)
Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage
Continuous forward current
VRRM
VRMS VDC
IF
TC ≤ 125 °C
400
283 400
300
600
424 600
300
Surge non-repetitive forward current, Half Sine Wave
Operating temperature Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
Tj Tstg
2750
-40 to 175 -.
Free Datasheet http://www.datasheet4u.net/ Free Datasheet http://www.datasheet4u.net/ .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MURT30040R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
2 | MURT30040R |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
3 | MURT30005 |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
4 | MURT30005 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
5 | MURT30005R |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
6 | MURT30005R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
7 | MURT30010 |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
8 | MURT30010 |
GeneSiC |
Silicon Super Fast Recovery Diode | |
9 | MURT30010R |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
10 | MURT30010R |
GeneSiC |
Silicon Super Fast Recovery Diode | |
11 | MURT30020 |
America Semiconductor |
Silicon Super Fast Recovery Diode | |
12 | MURT30020 |
GeneSiC |
Silicon Super Fast Recovery Diode |