MUR40060CTR - GeneSiC

MUR40060CTR Silicon Super Fast Recovery Diode

Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive MUR40040CT thru MUR40060CTR VRRM = 400 V - 600 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT(R) MUR40060CT(R) Re.

Features

• High Surge Capability
• Types from 400 to 600 V VRRM
• Not ESD Sensitive MUR40040CT thru MUR40060CTR VRRM = 400 V - 600 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT(R) MUR40060CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 400 280 400 -55 to 150 -55 to 150 600 420 600 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parame.