Fast Recovery Rectifier FEATURES ·Ultrafast Recovery Time ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in switching power supplies, inverters and as free wheeling diodes. MUR30120CT ABSOLUTE MAXIMUM RATINGS(Ta.
·Ultrafast Recovery Time
·Low Forward Voltage
·Low Leakage Current
·150℃ Operating Junction Temperature
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in switching power supplies, inverters and as
free wheeling diodes.
MUR30120CT
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM VRWM
VR
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
1200
V
IF(AV)
Average Rectified Forward Current Per Leg
(Rated VR)
Total Device
15 30
A
IFM
Peak Repetitive Forward Current (Rated.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MUR30120 |
Sirectifier |
Ultra Fast Recovery Diodes | |
2 | MUR30120 |
Inchange Semiconductor |
Ultrafast Recovery Rectifier | |
3 | MUR30120PT |
INCHANGE |
Ultrafast Rectifier | |
4 | MUR30120PT |
Sirectifier |
Ultra Fast Recovery Diodes | |
5 | MUR3010 |
Thinki Semiconductor |
30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes | |
6 | MUR3010CT |
MIC |
ULTRA FAST RECTIFIER | |
7 | MUR3010CT |
KI SEMICONDUCTOR |
ULTRA FSAT RECTlFIER | |
8 | MUR3010GD |
Thinki Semiconductor |
30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes | |
9 | MUR3010PA |
Thinki Semiconductor |
30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes | |
10 | MUR3010PT |
Harris Corporation |
(MUR3010PT - MUR3020PT) Ultrafast Dual Diodes | |
11 | MUR3010PT |
Thinki Semiconductor |
30.0 Ampere Glass Passivated Ultrafast Recovery Rectifier Diodes | |
12 | MUR3010PT |
GOOD ELECTRONIC |
SUPER FAST RECOVERY RECTIFIER |