MUR30040CTR - Naina Semiconductor

MUR30040CTR Super Fast Recovery Diode

Naina Semiconductor Ltd. MUR30040CT thru MUR30060CTR Features Super Fast Recovery Diode, 300A • Dual Diode Construction • Low Leakage Current • Low forward voltage drop • High surge current capability • Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Repetitive peak reverse voltage VRR.

Features

Super Fast Recovery Diode, 300A
• Dual Diode Construction
• Low Leakage Current
• Low forward voltage drop
• High surge current capability
• Super Fast Switching TWIN TOWER PACKAGE Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Symbol Repetitive peak reverse voltage VRRM RMS reverse voltage VRMS DC blocking voltage VDC Average forward current IF(AV) Non-repetitive forward surge current, half sinewave IFSM Conditions TC ≤ 140 oC TC = 25 oC MUR30040CT(R) 400 280 400 300 1500 MUR30060CT(R) 600 420 600 300 1500 Units V V V A A Electrical Characteristics (TJ =.