MTV25N50E - Motorola

MTV25N50E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV25N50E/D Advance Information TMOS E-FET.™ Power Field Effect Transistor D3PAK for Surface Mount The D3PAK package has the capability of housing the largest chip size of any standard, plastic, surface mount power semiconductor. This allows it to be used in applications that require surface mo.

Features

peed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. MTV25N50E TMOS POWER FET 25 AMPERES 500 VOLTS RDS(on) = 0.200 OHM N
  –Channel Enhancement
  –Mode Silicon Gate ® D N
  –Channel G CASE 433
  –01, Style 2 D3PAK Surface Mount
• Robust High Voltage Termination S
• Avalanche Energy Specified
• Source
  –to
  –Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
• Short Heatsink Tab Manufactured
  – Not Sheared
•.