These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. z Low RDS(on) z VGS Rated at ±20V z Silicon Gate for Fast Switching Speeds z IDSS, VDS(on), Specified at Elevated Temperature.
e, refer to Section 7. ID at Tc=100¥ 1.5A 1.5A 1.0A 1.0A 1.5A 1.5A 1.0A 1.0A 2.0A 2.0A Case Style TO-204AA TO-220AB www.artschip.com 1 IRF420-423/IRF820-823 MTP2N45/2N50 N-Channel Power MOSFETs 3.0A, 450V/500V Maximum Ratings Symbol Characteristic VDSS VDGR VGS TJ, Tstg TL Drain to Source Voltage 1 Drain to Gate Voltage 1 RGS=20kΩ Gate to Source Voltage Operating Junction and Storage Temperatures Maximum Lead Temperature for Soldering Purposes, 1/8” From Case for 5s Rating IRF420/422 IRF820/822 MTP2N50 500 500 ±20 -55 to +150 275 Maximum Thermal Characteristics RӨJC RӨJA PD IDM .
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MTP2N40 |
Fairchild Semiconductor |
(MTP2N35 / MTP2N40) N-Channel Power MOSFETs | |
2 | MTP2N40E |
Motorola |
TMOS POWER FET | |
3 | MTP2N40E |
ON Semiconductor |
Power Field Effect Transistor | |
4 | MTP2N20 |
Motorola |
POWER FIELD EFFECT TRANSISTOR | |
5 | MTP2N35 |
ART CHIP |
N-Channel MOSFET | |
6 | MTP2N50 |
ART CHIP |
N-Channel Power MOSFET | |
7 | MTP2N50 |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | MTP2N50 |
INCHANGE |
N-Channel MOSFET | |
9 | MTP2N50E |
Motorola |
Power MOSFET | |
10 | MTP2N55 |
Motorola |
Power Field Effect Transistor | |
11 | MTP2N60 |
Motorola |
Power Field Effect Transistor | |
12 | MTP2N60E |
Motorola |
TMOS POWER FET |