MTE110P10KQ8 - Cystech Electonics

MTE110P10KQ8 P-Channel Enhancement Mode MOSFET

CYStech Electronics Corp. Spec. No. : C165Q8 Issued Date : 2015.09.24 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTE110P10KQ8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • ESD protected gate • Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=.

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• ESD protected gate
• Pb-free and Halogen-free package BVDSS ID@VGS=-10V, TA=25°C RDSON@VGS=-10V, ID=-2A RDSON@VGS=-6V, ID=-2A -100V -3.7A 97mΩ(typ) 113mΩ(typ) Equivalent Circuit MTE110P10KQ8 Outline SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTE110P10KQ8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & r.