MTD3055VL - ON Semiconductor

MTD3055VL Power MOSFET

MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode .

Features

d Storage Temperature Range Single Pulse Drain
  –to
  –Source Avalanche Energy
  – Starting TJ = 25°C (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 12 Apk, L = 1.0 mH, RG = 25 Ω) Thermal Resistance
  – Junction to Case
  – Junction to Ambient
  – Junction to Ambient, when mounted to minimum recommended pad size Maximum Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD Value 60 60 ±15 ± 20 12 8.0 42 48 0.32 1.75 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C Watts 4 1 2 3 Y WW T CASE 369A DPAK STYLE 2 = Year = Work Week = MOSFET YWW T 3055VL G S http://onsemi.com 12 AM.