MTD2955E - Motorola

MTD2955E TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2955E Motorola Preferred Device P–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy e.

Features

vailable in 16 mm, 13
  –inch/2500 Unit Tape & Reel, Add T4 Suffix to Part Number
• Replaces the MTD2955 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain
  –Source Voltage Drain
  –Gate Voltage (RGS = 1.0 MΩ) Gate
  –Source Voltage — Continuous Gate
  –Source Voltage — Non
  –Repetitive (tp ≤ 10 ms) Drain Current — Continuous Drain Current — Continuous @ 100°C Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation Derate above 25°C Total Power Dissipation @ TA = 25°C, when mounted to minimum recommended pad size Operating and Storage Temperature Range Single Pulse Drain
  –to
  –Source Avala.