MTC4103N8J - Cystech Electonics

MTC4103N8J P- & N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C561N8J Issued Date : 2016.12.27 Revised Date : age No. : 1/13 N- AND P-Channel Enhancement Mode MOSFET MTC4103N8J BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON@VGS=10V(-10V) typ. RDSON@VGS=4.5V(-4.5V) typ. RDSON@VGS=4V(-4V) typ. Features • Simple drive requirement • Low on-resistance • Fast switching.

Features

• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free lead plating and halogen-free package N-CH 30V 4.4A 6.3A 28mΩ 52mΩ 66mΩ P-CH -30V -3.8A -5.5A 49mΩ 67mΩ 75mΩ Equivalent Circuit MTC4103N8J Outline 2928-8J G：Gate S：Source D：Drain Pin 1 Ordering Information Device MTC4103N8J-0-T1-G Package 2928-8J (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for .