MTB050P10E3 - Cystech Electonics

MTB050P10E3 P-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C975E3 Issued Date : 2014.07.10 Revised Date : Page No. : 1/8 P-Channel Enhancement Mode Power MOSFET MTB050P10E3 BVDSS ID @ VGS=-10V RDSON(TYP) @ VGS=-10V, ID=-20A RDSON(TYP) @ VGS=-4.5V, ID=-15A -100V -40A 46mΩ 52mΩ Features  Low Gate Charge  Simple Drive Requirement  Repetitive Avalanche Rated  Fast Switc.

Features

 Low Gate Charge
 Simple Drive Requirement
 Repetitive Avalanche Rated
 Fast Switching Characteristic
 RoHS compliant package Symbol MTB050P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB050P10E3-0-UB-S Package TO-220 (Pb-free lead plating package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTB050P10E3 CYStek Product Specification .