MTA7D0P03H8 - CYStech

MTA7D0P03H8 P-Channel MOSFET

CYStech Electronics Corp. Spec. No. : C808H8 Issued Date : 2018.02.05 Revised Date : Page No. : 1/ 11 P-Channel Enhancement Mode Power MOSFET MTA7D0P03H8 BVDSS ID@VGS=-10V, TC=25°C ID@VGS=-10V, TA=25°C VGS=-10V, ID=-15A Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free packag.

Features

• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-4.5V, ID=-10A VGS=-3V, ID=-5A -30V -55A -12.3A 7.1mΩ 9.3mΩ 14.3mΩ Symbol MTA7D0P03H8 G：Gate D：Drain S：Source Outline Pin 1 S S S G DFN5×6 D D D D G S S S D D D D Pin 1 Ordering Information Device MTA7D0P03H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 p.