MT9LSDT872 - Micron Technology

MT9LSDT872 SYNCHRONOUS DRAM MODULE

The MT9LSDT872 and MT9LSDT1672 are high-speed CMOS, dynamic random-access, 64MB and 128MB memories organized in a x72 configuration. These modules use internally configured quad-bank SDRAMs with a synchronous interface (all signals are registered on the positive edge of clock signals CK0). Read and write accesses to the SDRAM modules are burst oriented; acce.

Features

• JEDEC-standard 168-pin, dual in-line memory module (DIMM)
• PC133- and PC100-compliant
• Registered inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• Utilizes 133 MHz and 125 MHz SDRAM components
• ECC-optimized pinout
• 64MB (8 Meg x 72) and 128MB (16 Meg x 72)
• Single +3.3V ±0.3V power supply
• Fully synchronous; all signals registered on positive edge of PLL clock
• Internal pipelined operation; column address can be changed every clock cycle
• Internal SDRAM banks for hiding row access/ precharge
• Programmable burst lengths: 1, 2, 4, 8, or full page
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