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MOS-TECH Semiconductor Co.,LTD MT8103 P-Channel Enhancement Mode Field Effect Transistor Product Summary VDS= -30V ID= -13A (VGS= -10V) ≦ ΩRDS(ON) 10m @VGS= -10V ≦ ΩRDS(ON) 15.5m @VGS= -4.5V Applications： ▪ Notebook Computer ▪ Portable Battery Pack Features Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead fr.
Advanced Trench Process Technology. High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. RoHS Compliant. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range 10s Steady State -30 ±20 -13 -9 -50 -2.7 -1.36 3.0 1.5 -55 to 150 Units V V A A A W ℃ Thermal Resistance Ratings Symbol Parameter Rth.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT8102 |
Maxic Technology |
450KHz Step-Down Converter |
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| 2 | MT800 |
TECHSEM |
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| 3 | MT820-xx |
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| 4 | MT8205 |
MOS-TECH |
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| 5 | MT8205A |
MOS-TECH |
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| 6 | MT8292 |
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NEC |
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MagnTek |
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| 9 | MT8312 |
MagnTek |
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| 10 | MT8313 |
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| 11 | MT8600 |
AEROSEMI |
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