MT51J256M32 - Micron Technology

MT51J256M32 GDDR5 SGRAM

8Gb: x16, x32 GDDR5 SGRAM Features GDDR5 SGRAM MT51J256M32 – 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks Features • VDD = VDDQ = 1.5V ±3% and 1.35V ±3% • Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s • 16 internal banks • Four bank groups for tCCDL = 3 tCK • 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16 •.

Features

GDDR5 SGRAM MT51J256M32
  – 16 Meg x 32 I/O x 16 banks, 32 Meg x 16 I/O x 16 banks Features
• VDD = VDDQ = 1.5V ±3% and 1.35V ±3%
• Data rate: 6.0 Gb/s, 7.0 Gb/s, 8.0 Gb/s
• 16 internal banks
• Four bank groups for tCCDL = 3 tCK
• 8n-bit prefetch architecture: 256-bit per array read or write access for x32; 128-bit for x16
• Burst length (BL): 8 only
• Programmable CAS latency: 7
  –24
• Programmable WRITE latency: 4
  –7
• Programmable CRC READ latency: 2
  –3
• Programmable CRC WRITE latency: 8
  –14
• Programmable EDC hold pattern for CDR
• Precharge: Auto option for each burst access
• Auto refresh and.