These P-Channel enhancement mode power field effect transistors are produced using Mos-tech’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well .
• -9.4A, -100V, RDS(on) = 0.15Ω @VGS = -10 V
• Low gate charge ( typical 21 nC)
• Low Crss ( typical 65 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 100% RG tested
• RoHS Compliant
DD
G S D-PAK
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current Drain Cur.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT190AW01-V0 |
Innolux |
LCD Module | |
2 | MT190AW01-V1 |
INNOLUX |
LCD | |
3 | MT190AW01-V3 |
Innolux |
LCD Module | |
4 | MT190AW01-V5 |
Innolux |
LCD Module | |
5 | MT190AW02-V1 |
INNOLUX |
LCD | |
6 | MT190AW02-V3 |
INNOLUX |
LCD Module | |
7 | MT190AW02-V4 |
INNOLUX |
LCD Module | |
8 | MT190AW02-VA |
INNOLUX |
LCD Module | |
9 | MT190AW02-VW |
INNOLUX |
LCD Module | |
10 | MT190AW02-VY |
INNOLUX |
LCD Module | |
11 | MT190AW02V.W |
INNOLUX |
LCD Module | |
12 | MT190EN02-VW |
Innolux |
LCD Module |