MOS-TECH Semiconductor Co.,LTD N-Channel Enhancement Mode Field Effect Transistor MT1803 Features: VDS=30V ℃ID=60A(Tc=25 , VGS=10V) ≦RDS(ON) 6.5mΩ @VGS=10V ≦RDS(ON) 10mΩ @VGS=4.5V High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. Applications: Switching Applications. ℃Absolute Maximum Ratings (TA = 25 unless otherwise .
VDS=30V ℃ID=60A(Tc=25 , VGS=10V) ≦RDS(ON) 6.5mΩ @VGS=10V ≦RDS(ON) 10mΩ @VGS=4.5V High Density Cell Design for Ultra Low On-Resistance. Lead free product is acquired. Applications: Switching Applications. ℃Absolute Maximum Ratings (TA = 25 unless otherwise noted) Symbol VDS VGS ID IDM IS PD TJ, Tstg Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Maximum Power Dissipation 1 Operating Junction and Storage Temperature Range ℃Tc=25 ℃Tc=25 Thermal Resistance Ratings Symbol Parameter RthJA Ma.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MT1812 |
Sumida Corporation |
MODEM Transformer | |
2 | MT1812B |
Sumida Corporation |
MODEM Transformer | |
3 | MT185GW01-V0 |
INNOLUX |
LCD | |
4 | MT185GW01-V2 |
Innolux |
LCD Module | |
5 | MT185GW01-V4 |
CHIMEI Innolux |
TFT LCD | |
6 | MT185GW01-VA |
INNOLUX |
LCD | |
7 | MT185GW01-VB |
INNOLUX |
LCD | |
8 | MT18HTF12872 |
Micron |
1GB DDR2 SDRAM Registered DIMM | |
9 | MT18HTF12872P |
Micron |
1GB DDR2 SDRAM Registered DIMM | |
10 | MT18HTF25672 |
Micron |
2GB DDR2 SDRAM Registered DIMM | |
11 | MT18HTF25672P |
Micron |
2GB DDR2 SDRAM Registered DIMM | |
12 | MT18HTF6472 |
Micron |
512MB DDR2 SDRAM Registered DIMM |