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SYMBOL WE#, CAS#,RAS# CK0, CK0# CK1, CK1# TYPE Input Input DESCRIPTION Command Inputs: RAS#, CAS#, and WE# (along with S#) define the command being entered. Clock: CK, CK# are differential clock inputs. All address and control input signals are sampled on the crossing of the positive edge of CK, and negative edge of CK#. Output data (DQs and DQS) is referen.
• 200-pin, small-outline, dual in-line memory module (SODIMM)
• Fast data transfer rates: PC1600, PC2100, and PC2700 www.DataSheet4U.com
• Utilizes 200 MT/s, 266 MT/s, or 333 MT/s DDR SDRAM components
• 512MB (64 Meg x 64), 1GB (128 Meg x 64)
• VDD = VDDQ = +2.5V
• VDDSPD = +2.3V to +3.6V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; centeraligned with data for WRITEs
• Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle
• Bidirectional data strobe (DQS) transmitted/ received with data—i.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | MT16VDDF12864H |
Micron Technology |
SMALL-OUTLINE DDR SDRAM DIMM |
|
| 2 | MT16VDDT12864A |
Micron |
1GB DDR SDRAM UNBUFFERED DIMM |
|
| 3 | MT16VDDT25664A |
Micron |
2GB DDR SDRAM UNBUFFERED DIMM |
|
| 4 | MT16VDDT3264A |
Micron |
256MB DDR SDRAM UNBUFFERED DIMM |
|
| 5 | MT16VDDT6464A |
Micron |
512MB DDR SDRAM UNBUFFERED DIMM |
|
| 6 | MT1610A |
Sumida Corporation |
MODEM Transformer |
|
| 7 | MT1610B |
Sumida Corporation |
MODEM Transformer |
|
| 8 | MT1610C |
Sumida Corporation |
MODEM Transformer |
|
| 9 | MT16D132 |
Micron Technology |
1 MEG x 32 DRAM MODULES |
|
| 10 | MT16D232 |
Micron Technology |
2Meg x 32 DRAM |
|
| 11 | MT16D232 |
Micron Technology |
DRAM Module |
|
| 12 | MT16D232x |
Micron Technology |
1 Meg / 2 Meg x 32 DRAM Module |
|