MSS60-841-E45 - MA-COM

MSS60-841-E45 Extra High Barrier Silicon Schottky Diodes

The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS60-144-B10B Single .

Features

 VF, RD and CJ Matching Options
 Chip, Beam Lead and Packaged Devices
 Hi-Rel Screening per MIL-PRF-19500 and MIL- PRF-38534 Available Description The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS60-144-B10B Single Junction 625 MSS60-148-B10B Single Junction 625 MSS60-153-B10B Single Junction 625 .