The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode. Rev. V1 Beam Lead Electrical Specifications: TA = 25°C Model Configuration VF Typ. V MSS60-144-B10B Single .
VF, RD and CJ Matching Options
Chip, Beam Lead and Packaged Devices
Hi-Rel Screening per MIL-PRF-19500 and MIL-
PRF-38534 Available
Description
The MSS60-xxx-x Series of Schottky diodes are fabricated on N-Type epitaxial substrates using proprietary processes that yield the highest FCOs in the industry. Optimum mixer performance is obtained with LO power of +6 dBm to +12 dBm per diode.
Rev. V1
Beam Lead
Electrical Specifications: TA = 25°C
Model
Configuration
VF Typ.
V
MSS60-144-B10B
Single Junction
625
MSS60-148-B10B
Single Junction
625
MSS60-153-B10B
Single Junction
625
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | MSS60-253-B20 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
2 | MSS60-253-E35 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
3 | MSS60-244-B20 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
4 | MSS60-244-E35 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
5 | MSS60-244-H30 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
6 | MSS60-248-B20 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
7 | MSS60-248-E35 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
8 | MSS60-248-H30 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
9 | MSS60-144-B10B |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
10 | MSS60-144-E25 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
11 | MSS60-144-H20 |
MA-COM |
Extra High Barrier Silicon Schottky Diodes | |
12 | MSS60-148-B10B |
MA-COM |
Extra High Barrier Silicon Schottky Diodes |