MSRT20060AD - GeneSiC

MSRT20060AD Silicon Standard Recovery Diode

Silicon Standard Recovery Diode Features • High Surge Capability • Types from 600 V to 1000 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MSRT20060(A)D thru MSRT200100(A)D VRRM = 600 V - 1000 V IF(AV) = 200 A Three Tower Package MSRT200XXAD MSRT200XXADR MSRT200XXD Maximum ratings, at Tj = 25 °C, unless otherwise sp.

Features

• High Surge Capability
• Types from 600 V to 1000 V VRRM
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive MSRT20060(A)D thru MSRT200100(A)D VRRM = 600 V - 1000 V IF(AV) = 200 A Three Tower Package MSRT200XXAD MSRT200XXADR MSRT200XXD Maximum ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MSRT20060(A)D MSRT20080(A)D MSRT200100(A)D Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 600 424 600 -55 to 150 -55 to 150 800 566 800 -55 t.