MSQA6V1W5T2G - ON Semiconductor

MSQA6V1W5T2G ESD Protection Diode Array

of survivability specs. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM VBR Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Po.

Features

• Low Clamping Voltage
• Stand Off Voltage 3 V
• Low Leakage < 1 mA @ 3 V
• SC−88A Package Allows Four Separate Unidirectional Configurations
• IEC1000−4−2 Level 4 ESD Protection
• SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• Pb−Free Package is Available
* Mechanical Characteristics:
• Void Free, Transfer−Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
*For add.